PART |
Description |
Maker |
IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门)) TMOS POWER FET 14 AMPERES From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
MTD1N40 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
ATC100B330JT500XT ATC200B203KT50XT CDR33BX104AKYS |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRF6S21050LR3 MRF6S21050LSR3 |
RF Power Field Effect Transistors
|
Freescale (Motorola) Freescale Semiconductor, Inc
|
MRF8S19260HR6 MRF8S19260HSR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
UFT150-28 |
RF POWER FIELD-EFFECT TRANSISTOR
|
Advanced Semiconductor, Inc.
|
MTP12N10L |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|